THE BEST SIDE OF AGGAGES4 CRYSTAL

The period identification of AgGaGeS4·nGeS2 (n=0–four) crystals developed by vertical Bridgman–Stockbarger method was carried out to discover the boundary benefit n between a homogeneous strong solution and its combination with GeS2. To get dependable effects, the traditional ways of X-ray diffraction (XRD) and Electricity dispersive X-ray spe

Such actions corresponds to the dopant induced magnetism during the host semiconductor and agrees perfectly Using the theoretical predictions As well as the observation of half metallicity. The variation in band hole to be a perform of cobalt concentration attributes for the structural modification soon after cobalt doping and incidence of quantum